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IPG20N06S4L11AATMA1

IPG20N06S4L11AATMA1

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Part No :

IPG20N06S4L11AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
879687 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPG20N06S4L11AATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:4020pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
IPG20N06S4L11AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N06S4L11AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N06S4L11AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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