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ELM 3-210

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IRF9952QPBF

IRF9952QPBF

P-CHANNEL POWER MOSFET

IRF9952QPBF

IRF9952QPBF

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Part No :

IRF9952QPBF

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
509650 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.5A, 2.3A
Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
Power - Max:2W
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF9952QPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9952QPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9952QPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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