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NVMFD5485NLT1G

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Part No :: NVMFD5485NLT1G

Manufacturer: Rochester Electronics

Description: POWER FIELD-EFFECT TRANSISTOR

Catalog: Transistors - FETs, MOSFETs - Arrays

Availability: 16000 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 26 - Nov 30 2024

PDF: NVMFD5485NLT1G PDF

Type	Description
Series:	-
Package:	Bulk
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5.3A
Rds On (Max) @ Id, Vgs:	44mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	560pF @ 25V
Power - Max:	2.9W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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