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CSD85312Q3E

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MOSFET 2N-CH 20V 39A 8VSON

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CSD85312Q3E

CSD85312Q3E

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Part No :

CSD85312Q3E

Manufacturer
Texas Instruments
Description
MOSFET 2N-CH 20V 39A 8VSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
13607 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:39A
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:2390pF @ 10V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:8-VSON (3.3x3.3)
CSD85312Q3E is available at GangBo-ic.com, Please review product page below for detailed information, including CSD85312Q3E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CSD85312Q3E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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