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DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

IGBT MODULE

DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

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Part No :

DF11MR12W1M1B11BOMA1

Manufacturer
Rochester Electronics
Description
IGBT MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
799379 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2025
PDF
DF11MR12W1M1B11BOMA1 PDF
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:50A
Rds On (Max) @ Id, Vgs:23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
DF11MR12W1M1B11BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including DF11MR12W1M1B11BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DF11MR12W1M1B11BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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