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FF8MR12W2M1B11BOMA1

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FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

Image is for reference, please contact us to get the real picture

Part No :

FF8MR12W2M1B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 1200V AG-EASY2BM-2
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
19000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:150A (Tj)
Rds On (Max) @ Id, Vgs:7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id:5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs:372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:11000pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY2BM-2
FF8MR12W2M1B11BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF8MR12W2M1B11BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF8MR12W2M1B11BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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