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JAN2N5012S

JAN2N5012S

NPN TRANSISTOR

JAN2N5012S

JAN2N5012S

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Part No :

JAN2N5012S

Manufacturer
Microsemi
Description
NPN TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
137913 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:Military, MIL-PRF-19500/727
Package:Bulk
Part Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 25mA, 10V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
JAN2N5012S is available at GangBo-ic.com, Please review product page below for detailed information, including JAN2N5012S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JAN2N5012S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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