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2N5551RLRMG

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2N5551RLRMG

2N5551RLRMG

Image is for reference, please contact us to get the real picture

Part No :

2N5551RLRMG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN 160V 0.6A TO-92
Catalog
Transistors - Bipolar (BJT) - Single
Availability
455645 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
2N5551RLRMG PDF
Type Description
Series:-
Package:Tape & Box (TB)
Part Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:TO-92-3
2N5551RLRMG is available at GangBo-ic.com, Please review product page below for detailed information, including 2N5551RLRMG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N5551RLRMG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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