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MJD3055TF

MJD3055TF

NPN EPITAXIAL SILICON TRANSISTOR

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MJD3055TF

MJD3055TF

Image is for reference, please contact us to get the real picture

Part No :

MJD3055TF

Manufacturer
Rochester Electronics
Description
NPN EPITAXIAL SILICON TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
43600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 20 - Feb 24 2025
PDF
MJD3055TF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:2MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
MJD3055TF is available at GangBo-ic.com, Please review product page below for detailed information, including MJD3055TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD3055TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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