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NJVMJD148T4G

NJVMJD148T4G

POWER BIPOLAR TRANSISTOR, 4A, NP

NJVMJD148T4G

NJVMJD148T4G

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Part No :

NJVMJD148T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 4A, NP
Catalog
Transistors - Bipolar (BJT) - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
Current - Collector Cutoff (Max):20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:1.75 W
Frequency - Transition:3MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD148T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD148T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD148T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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