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NJVMJD210T4G

NJVMJD210T4G

POWER BIPOLAR TRANSISTOR, 5A, PN

NJVMJD210T4G

NJVMJD210T4G

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Part No :

NJVMJD210T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 5A, PN
Catalog
Transistors - Bipolar (BJT) - Single
Availability
57023 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
NJVMJD210T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:1.4 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD210T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD210T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD210T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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