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MJD45H11TM

MJD45H11TM

POWER BIPOLAR TRANSISTOR

CA3509M4

CA3509M4

LOW NOISE AMPLIFIER HJ-FET

MJD45H11TM

MJD45H11TM

Image is for reference, please contact us to get the real picture

Part No :

MJD45H11TM

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
13238 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
MJD45H11TM PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:40MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-3
MJD45H11TM is available at GangBo-ic.com, Please review product page below for detailed information, including MJD45H11TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD45H11TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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