LOW VCE(SAT) TRANSISTOR, UPN, 20
DIODE GEN PURP 1KV 2A DO214AA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5 A |
Voltage - Collector Emitter Breakdown (Max): | 20 V |
Vce Saturation (Max) @ Ib, Ic: | 125mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 875 mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-WDFN Exposed Pad |
Supplier Device Package: | 3-WDFN (2x2) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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