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2N2102

2N2102

T-NPN SI- GEN PUR AMP

2N2102

2N2102

Image is for reference, please contact us to get the real picture

Part No :

2N2102

Manufacturer
NTE Electronics, Inc.
Description
T-NPN SI- GEN PUR AMP
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10127 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
2N2102 PDF
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 15mA, 150mA
Current - Collector Cutoff (Max):2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39
2N2102 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N2102 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N2102 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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