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NSS20201MR6T1G

NSS20201MR6T1G

POWER BIPOLAR TRANSISTOR, 2A, 20

1223.3

1223.3

TRANSFORMER TERMINAL

NSS20201MR6T1G

NSS20201MR6T1G

Image is for reference, please contact us to get the real picture

Part No :

NSS20201MR6T1G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 2A, 20
Catalog
Transistors - Bipolar (BJT) - Single
Availability
46370 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NSS20201MR6T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:150mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 5V
Power - Max:460 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6
Supplier Device Package:6-TSOP
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