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MJD117T4G

MJD117T4G

POWER BIPOLAR TRANSISTOR, 2A, 10

MJD117T4G

MJD117T4G

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Part No :

MJD117T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 2A, 10
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10182 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
MJD117T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
MJD117T4G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD117T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD117T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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