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MJD112RLG

MJD112RLG

TRANS NPN DARL 100V 2A DPAK

905-BA2-O

905-BA2-O

PMI .290" 2VDC NO LENS AMBER

MJD112RLG

MJD112RLG

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Part No :

MJD112RLG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 100V 2A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10135 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
MJD112RLG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
MJD112RLG is available at GangBo-ic.com, Please review product page below for detailed information, including MJD112RLG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD112RLG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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