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NJVMJD112G

NJVMJD112G

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Part No :

NJVMJD112G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 100V 2A DPAK-4
Catalog
Transistors - Bipolar (BJT) - Single
Availability
942694 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NJVMJD112G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD112G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD112G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD112G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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