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MJE800G

MJE800G

TRANS NPN DARL 60V 4A TO225AA

1731120402

1731120402

FCT THMB SCREW M3 43.5

MJE800G

MJE800G

Image is for reference, please contact us to get the real picture

Part No :

MJE800G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 60V 4A TO225AA
Catalog
Transistors - Bipolar (BJT) - Single
Availability
511951 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
MJE800G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-225AA
MJE800G is available at GangBo-ic.com, Please review product page below for detailed information, including MJE800G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJE800G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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