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MJD122TF

MJD122TF

POWER BIPOLAR TRANSISTOR

MJD122TF

MJD122TF

Image is for reference, please contact us to get the real picture

Part No :

MJD122TF

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
971797 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
MJD122TF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
MJD122TF is available at GangBo-ic.com, Please review product page below for detailed information, including MJD122TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD122TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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