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FJA4313RTU

FJA4313RTU

POWER BIPOLAR TRANSISTOR

MT53B1G32D4NQ-062 WT ES:D TR

MT53B1G32D4NQ-062 WT ES:D TR

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FJA4313RTU

FJA4313RTU

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Part No :

FJA4313RTU

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10271 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FJA4313RTU PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):17 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
Current - Collector Cutoff (Max):5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A, 5V
Power - Max:130 W
Frequency - Transition:30MHz
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3PN
FJA4313RTU is available at GangBo-ic.com, Please review product page below for detailed information, including FJA4313RTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FJA4313RTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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