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MJ11012G

MJ11012G

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MJ11012G

MJ11012G

Image is for reference, please contact us to get the real picture

Part No :

MJ11012G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 60V 30A TO204
Catalog
Transistors - Bipolar (BJT) - Single
Availability
75200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
MJ11012G PDF
Type Description
Series:-
Package:Tray
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):30 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:4V @ 300mA, 30A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 20A, 5V
Power - Max:200 W
Frequency - Transition:4MHz
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-204 (TO-3)
MJ11012G is available at GangBo-ic.com, Please review product page below for detailed information, including MJ11012G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJ11012G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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