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2SD1805G-TL-E

2SD1805G-TL-E

NPN EPITAXIAL PLANAR SILICON

2SD1805G-TL-E

2SD1805G-TL-E

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Part No :

2SD1805G-TL-E

Manufacturer
Rochester Electronics
Description
NPN EPITAXIAL PLANAR SILICON
Catalog
Transistors - Bipolar (BJT) - Single
Availability
72460 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
2SD1805G-TL-E PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 60mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:280 @ 500mA, 2V
Power - Max:1 W
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK/TP-FA
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