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2SA2016-TD-E

2SA2016-TD-E

POWER BIPOLAR TRANSISTOR, 7A, 50

2SA2016-TD-E

2SA2016-TD-E

Image is for reference, please contact us to get the real picture

Part No :

2SA2016-TD-E

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 7A, 50
Catalog
Transistors - Bipolar (BJT) - Single
Availability
14450 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
2SA2016-TD-E PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):7 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 40mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
Power - Max:3.5 W
Frequency - Transition:330MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PCP
2SA2016-TD-E is available at GangBo-ic.com, Please review product page below for detailed information, including 2SA2016-TD-E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2SA2016-TD-E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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