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2SA2016-TD-E

2SA2016-TD-E

POWER BIPOLAR TRANSISTOR, 7A, 50

2SA2016-TD-E

2SA2016-TD-E

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Part No :

2SA2016-TD-E

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 7A, 50
Catalog
Transistors - Bipolar (BJT) - Single
Availability
14450 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
2SA2016-TD-E PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):7 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 40mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
Power - Max:3.5 W
Frequency - Transition:330MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PCP
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