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RN1132MFV,L3F

RN1132MFV,L3F

Image is for reference, please contact us to get the real picture

Part No :

RN1132MFV,L3F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
471847 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2025
PDF
RN1132MFV,L3F PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):200 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
RN1132MFV,L3F is available at GangBo-ic.com, Please review product page below for detailed information, including RN1132MFV,L3F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1132MFV,L3F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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  • RN1132MFV,L3F Price
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