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FJV3115RMTF

FJV3115RMTF

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FJV3115RMTF

FJV3115RMTF

Image is for reference, please contact us to get the real picture

Part No :

FJV3115RMTF

Manufacturer
Rochester Electronics
Description
0.1A, 50V, NPN
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
295355 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FJV3115RMTF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
FJV3115RMTF is available at GangBo-ic.com, Please review product page below for detailed information, including FJV3115RMTF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FJV3115RMTF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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