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MT3S113P(TE12L,F)

MT3S113P(TE12L,F)

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

MT3S113P(TE12L,F)

MT3S113P(TE12L,F)

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Part No :

MT3S113P(TE12L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Catalog
Transistors - Bipolar (BJT) - RF
Availability
11818 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
MT3S113P(TE12L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:7.7GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:10.5dB
Power - Max:1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI
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