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MT3S113(TE85L,F)

MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI

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MT3S113(TE85L,F)

MT3S113(TE85L,F)

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Part No :

MT3S113(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 5.3V 12.5GHZ SMINI
Catalog
Transistors - Bipolar (BJT) - RF
Availability
15819 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
MT3S113(TE85L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:12.5GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:11.8dB
Power - Max:800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:S-Mini
MT3S113(TE85L,F) is available at GangBo-ic.com, Please review product page below for detailed information, including MT3S113(TE85L,F) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT3S113(TE85L,F) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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