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MT3S20TU(TE85L)

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MT3S20TU(TE85L)

MT3S20TU(TE85L)

Image is for reference, please contact us to get the real picture

Part No :

MT3S20TU(TE85L)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 12V 7GHZ UFM
Catalog
Transistors - Bipolar (BJT) - RF
Availability
12871 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
MT3S20TU(TE85L) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.45dB @ 20mA, 5V
Gain:12dB
Power - Max:900mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
Current - Collector (Ic) (Max):80mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Supplier Device Package:UFM
MT3S20TU(TE85L) is available at GangBo-ic.com, Please review product page below for detailed information, including MT3S20TU(TE85L) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT3S20TU(TE85L) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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