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BFP183WE6327

BFP183WE6327

RF TRANSISTOR, L BAND, NPN

BFP183WE6327

BFP183WE6327

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Part No :

BFP183WE6327

Manufacturer
Rochester Electronics
Description
RF TRANSISTOR, L BAND, NPN
Catalog
Transistors - Bipolar (BJT) - RF
Availability
14546 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain:22dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 15mA, 8V
Current - Collector (Ic) (Max):65mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Supplier Device Package:PG-SOT343-4
BFP183WE6327 is available at GangBo-ic.com, Please review product page below for detailed information, including BFP183WE6327 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BFP183WE6327 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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