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HN1C01FU-Y,LF

HN1C01FU-Y,LF

NPN + NPN IND. TRANSISTOR VCEO50

HN1C01FU-Y,LF

HN1C01FU-Y,LF

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Part No :

HN1C01FU-Y,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPN + NPN IND. TRANSISTOR VCEO50
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
15279 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Power - Max:200mW
Frequency - Transition:80MHz
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
HN1C01FU-Y,LF is available at GangBo-ic.com, Please review product page below for detailed information, including HN1C01FU-Y,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN1C01FU-Y,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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