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FLS312-4G

FLS312-4G

#312 NC FLUX, SOLVENT BASED 2%

NSV40300MDR2G

NSV40300MDR2G

LOW VCE(SAT) TRANSISTOR, DUAL PN

NSV40300MDR2G

NSV40300MDR2G

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Part No :

NSV40300MDR2G

Manufacturer
Rochester Electronics
Description
LOW VCE(SAT) TRANSISTOR, DUAL PN
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 24 - Sep 28 2024
PDF
NSV40300MDR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:170mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Power - Max:653mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NSV40300MDR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NSV40300MDR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSV40300MDR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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  • NSV40300MDR2G Price
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