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NTE2018

NTE2018

IC-8 CHAN CMOS/TTL DR 18-PIN DIP

NTE2018

NTE2018

Image is for reference, please contact us to get the real picture

Part No :

NTE2018

Manufacturer
NTE Electronics, Inc.
Description
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
10187 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:8 NPN Darlington
Current - Collector (Ic) (Max):600mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 350mA, 500A
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:1W
Frequency - Transition:-
Operating Temperature:-20°C ~ 85°C (TA)
Mounting Type:Through Hole
Package / Case:18-DIP (0.300", 7.62mm)
Supplier Device Package:18-PDIP
NTE2018 is available at GangBo-ic.com, Please review product page below for detailed information, including NTE2018 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTE2018 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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