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NSVIMD10AMT1G

NSVIMD10AMT1G

SURF MT BIASED RES XSTR

NSVIMD10AMT1G

NSVIMD10AMT1G

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Part No :

NSVIMD10AMT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
SURF MT BIASED RES XSTR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
13389 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
NSVIMD10AMT1G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):13kOhms, 130Ohms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V / 68 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:285mW
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SC-74R
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