DIODE ZENER 8.2V 5W SMBJ
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2 V |
Tolerance: | ±10% |
Power - Max: | 5 W |
Impedance (Max) (Zzt): | 1.5 Ohms |
Current - Reverse Leakage @ Vr: | 10 µA @ 5.9 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 1 A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MMSZ4682-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 500MW SOD123 |
![]() |
1N4730A,133Nexperia |
DIODE ZENER 3.9V 1W DO41 |
![]() |
BZG03C110-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 1.25W DO214AC |
![]() |
SML4739AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1W DO214AC |
![]() |
1PGSMA160ZHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 160V 1.25W DO214AC |
![]() |
CZRF52C2V7Comchip Technology |
DIODE ZENER 2.7V 200MW 1005 |
![]() |
BZD27C47P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 800MW DO219AB |
![]() |
MMSZ5228B RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3.9V 500MW SOD123F |
![]() |
JAN1N4467DUSRoving Networks / Microchip Technology |
DIODE ZENER 12V 1.5W D5A |
![]() |
1N825AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
![]() |
1PMT5931B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 18V 3W DO216AA |
![]() |
MMBZ5257BLT3GRochester Electronics |
DIODE ZENER 33V 225MW SOT23-3 |
![]() |
BZD27C11P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 800MW DO219AB |