DIODE ZENER 10V 410MW SOD123
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10 V |
Tolerance: | ±5% |
Power - Max: | 410 mW |
Impedance (Max) (Zzt): | 5.2 Ohms |
Current - Reverse Leakage @ Vr: | 100 nA @ 7.5 V |
Voltage - Forward (Vf) (Max) @ If: | - |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDLL5945DRoving Networks / Microchip Technology |
DIODE ZENER 68V 1.25W DO213AB |
|
JAN1N4620UR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AA |
|
HZU11B3TRF-ERochester Electronics |
DIODE ZENER |
|
MMSZ5230B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW SOD123 |
|
ZPY82Diotec Semiconductor |
DIODE ZENER 82V 1.3W DO41 |
|
1PMT5949E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 100V 3W DO216AA |
|
JAN1N3022C-1Roving Networks / Microchip Technology |
DIODE ZENER 12V 1W DO41 |
|
BZX79B56 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 500MW DO35 |
|
BZG05C82-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.25W DO214AC |
|
MMSZ4V7ET1Rochester Electronics |
DIODE ZENER 4.7V 500MW SOD123 |
|
BZT52C5V1S-TPMicro Commercial Components (MCC) |
DIODE ZENER 5.1V 200MW SOD323 |
|
1N6019ARoving Networks / Microchip Technology |
DIODE ZENER 62V 500MW DO35 |
|
1SMB5944 M4GTSC (Taiwan Semiconductor) |
DIODE ZENER 62V 3W DO214AA |