TVS DIODE 5V 9.2V SMB
DIODE SCHOTTKY 45V 180A HALFPAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io): | 180A |
Voltage - Forward (Vf) (Max) @ If: | 660 mV @ 180 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 15 mA @ 45 V |
Capacitance @ Vr, F: | 7800pF @ 5V, 1MHz |
Mounting Type: | Chassis Mount |
Package / Case: | D-67 HALF-PAK |
Supplier Device Package: | HALF-PAK |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIDC06D60F6X7SA1IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
CD0201-T5.0CJ.W. Miller / Bourns |
DIODE |
|
1N4935GP-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
MURH10005GeneSiC Semiconductor |
DIODE GEN PURP 50V 100A D-67 |
|
1N4446 BKCentral Semiconductor |
DIODE GEN PURP 100V 150MA DO35 |
|
181NQ035Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 180A HALFPAK |
|
R9G22612CSOOPowerex, Inc. |
DIODE GP 2.6KV 1200A DO200AB |
|
IRD3CH24DB6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
EK 04VSanken Electric Co., Ltd. |
DIODE SCHOTTKY 40V 1A AXIAL |
|
SIDC06D60F6X1SA4IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
CDBMHT150-HFComchip Technology |
DIODE SCHOTTKY 50V 1A SOD123T |
|
GP10V-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
CGRBT204-HFComchip Technology |
DIODE GENERAL PURPOSE 2114 SMD |