CAP CER 2400PF 16V U2J 0603
DIODE
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 35 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 100pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | RA |
Supplier Device Package: | RA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FS2A-TPMicro Commercial Components (MCC) |
DIODE 2A 50V HSMA DO-214AC |
|
RM1800E-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1.8KV 500MA DO214 |
|
SIDC42D60E6X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 100A WAFER |
|
RH 1CSanken Electric Co., Ltd. |
DIODE GEN PURP 1KV 600MA AXIAL |
|
NXPSC10650DJWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 10A DPAK |
|
SIDC42D120H6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 75A WAFER |
|
F1T7GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A TS-1 |
|
BAV199T-7-GZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURPOSE |
|
VS-SDC270M08MPBFVishay General Semiconductor – Diodes Division |
MOD DIODE MAP COMPRESSED |
|
1N4003-N-2-2-BPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO41 |
|
R6100225XXYZPowerex, Inc. |
DIODE GEN PURP 200V 250A DO205AB |
|
RGP10M-7008E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
MSASC25W100KRoving Networks / Microchip Technology |
DIODE SCHOTTKY 100V 25A 2THINKEY |