DIODE GP 800V 6A LEADED BUTTON
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 25 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Button, Axial |
Supplier Device Package: | Leaded Button |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RL106GTASMC Diode Solutions |
DIODE GEN PURP 800V 1A A-405 |
|
DSB1I40SAWickmann / Littelfuse |
DIODE SCHOTTKY 40V 1A SMA |
|
TY056S150A6OTVishay General Semiconductor – Diodes Division |
DIODE 150V TMBS |
|
MURF860HSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURPOSE |
|
HCR4148MTXVTT Electronics / Optek Technology |
DIODE GEN PURP 100V 200MA 3SMD |
|
GP10N-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
1F2-APMicro Commercial Components (MCC) |
DIODE GPP FAST 1A R-1 |
|
MBRB16H50-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY TO-263AB |
|
R9G20809ASOOPowerex, Inc. |
DIODE FAST REC R9G 900A 800V |
|
IRKE71/12AVishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 80A ADD-A-PAK |
|
D1030N22TPRXOSA1IR (Infineon Technologies) |
DIODE BG-D5726K-1 |
|
SIDC14D60E6YX1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 30A WAFER |
|
R9G22812CSOOPowerex, Inc. |
DIODE GP 2.8KV 1200A DO200AB |