DIODE GEN PURP 100V 4A DO201AD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.85 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-87HFR60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
|
FR12KR05GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 12A DO4 |
|
1N4592GeneSiC Semiconductor |
DIODE GEN PURP 600V 150A DO205AA |
|
LSM130JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 30V SMAJ |
|
SS520F-HFComchip Technology |
DIODE SCHOTTKY 5A 200V SMAF |
|
1N3296AGeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 100A DO205 |
|
MURH10020RGeneSiC Semiconductor |
DIODE GEN PURP 200V 100A D-67 |
|
S2AB-HFComchip Technology |
RECTIFIER GEN PURP 50V 2A SMB |
|
UES2604Roving Networks / Microchip Technology |
RECTIFIER |
|
XBS303V19R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
|
GSQ05A06KYOCERA Corporation |
DIODE SCHOTTKY 60V 5A TO-220 2PI |
|
F1T3G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
1SS270JTA-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |