DIODE GEN PURP 800V 1.2A AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1.2A |
Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 1.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 18 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SD125SCU100A.T1SMC Diode Solutions |
PIV 100V IO 15A CHIP SIZE 125MIL |
|
S3GHM3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
|
SR1504 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 15A R-6 |
|
1N483Roving Networks / Microchip Technology |
DIODE RECT STD RECOVERY |
|
UPS130L/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 30V POWERMITE |
|
SFT18GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
|
VS-80PFR120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 80A DO203AB |
|
JTX1N3612Semtech |
D MET 1A STD 400V HR |
|
SD040SA60A.TSMC Diode Solutions |
PIV 60V IO 1A CHIP SIZE 40MIL SQ |
|
VS-65EPS12L-M3Vishay General Semiconductor – Diodes Division |
RECTIFIER DIODE 65A 1200V TO-247 |
|
SS820C-HFComchip Technology |
DIODE SCHOTTKY 8A 200V SMC |
|
ES 1ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 700MA AXIAL |
|
S1DAL M3GTSC (Taiwan Semiconductor) |
1A, 200V, STANDARD RECOVERY RECT |