40V SCHOTTKY DIODE XDFN2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 200 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 4 V |
Capacitance @ Vr, F: | 7pF @ 0V, 1MHz |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HER606G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A R-6 |
|
SM50Semtech |
DIODE GEN PURP 5KV 300MA AXIAL |
|
150K20AGeneSiC Semiconductor |
DIODE GEN PURP 200V 150A DO205AA |
|
SCKV100K3Semtech |
DIODE GEN PURP 100V 2A AXIAL |
|
FR30JR02GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 30A DO5 |
|
UES1306HR2Roving Networks / Microchip Technology |
RECTIFIER |
|
VS-95PFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 95A DO203AB |
|
FFD08S60SRochester Electronics |
600V, 8A, 2.1V, DPAK STEALTH II |
|
SCHJ37.5KSemtech |
DIODE GEN PURP 37.5KV 50MA AXIAL |
|
6A60GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A R-6 |
|
UFS380G/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 3A DO215AB |
|
SD241HR2Roving Networks / Microchip Technology |
RECTIFIER |
|
UFT3010Roving Networks / Microchip Technology |
RECTIFIER |