DIODE GEN PURP 1KV 1800A DO200AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1800A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 1500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 µs |
Current - Reverse Leakage @ Vr: | 150 mA @ 1000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AB, B-PUK |
Supplier Device Package: | DO-200AB, B-PUK |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-71HFLR100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |
|
1N4448WDComponents |
DIODE GEN PURP 75V 150MA SOD123F |
|
1N1202Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
JANTXV1N6642UB2Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA UB2 |
|
S16DGeneSiC Semiconductor |
DIODE GEN PURP 200V 16A DO203AA |
|
ES5G-T M6GTSC (Taiwan Semiconductor) |
35NS, 5A, 400V, SUPER FAST RECOV |
|
1SS119-04TJ-ERochester Electronics |
RECTIFIER DIODES |
|
US2KB-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 80 |
|
FR40JR02GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 40A DO5 |
|
TRA0101RLRochester Electronics |
SILICON RECTIFIER |
|
1N5232CRLRochester Electronics |
RECTIFIER DIODE |
|
6A100GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 6A R-6 |
|
V30K45-M3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY FP5X6 |