DIODE GEN PURP 400V 20A TO220AC
TVS DIODE 70V 113V PLAD
DC DC CONVERTER 40V 100W
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 160 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-STPS20L15DPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 20A TO220AC |
|
RSFJL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
|
BYT71-800STMicroelectronics |
DIODE GEN PURP 800V 6A TO220AC |
|
1N4004GPP BKCentral Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
|
SF38G-TPMicro Commercial Components (MCC) |
DIODE GPP HE 3A DO-201AD |
|
NSF8BTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
RGP20J-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
|
RS1KL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 800MA SUBSMA |
|
1N6631Roving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1.4A AXIAL |
|
FR152G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO204AC |
|
HER305-TPMicro Commercial Components (MCC) |
DIODE GPP HE 3A DO-201AD |
|
SR109 R1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A DO204AL |
|
1A1Rectron USA |
DIODE GEN PURP 1000V 1A R-1 |