RES 0.249 OHM 3W 1% WW AXIAL
ERL-20 1.8K 1% T-1 RLR20C1801FR
DIODE GEN PURP 600V 5A DO201AD
REDUCTION PG13.5/PG11
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 2.1 V @ 5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 20 ns |
Current - Reverse Leakage @ Vr: | 30 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ES1FLHRTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
SF1603PT C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 16A TO247AD |
|
SFF1006GAHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A ITO220AB |
|
RSFML RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500MA SUB SMA |
|
ES1CLHMTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A SUB SMA |
|
RMPG06GHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
|
D251N14BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.4KV 255A |
|
VS-30APF02PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A TO247AC |
|
GP10-4003HM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
DPF60XA400NAWickmann / Littelfuse |
DIODE GEN PURP 400V 60A SOT227B |
|
SL44HE3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AB |
|
HS1FL MHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
SRP300D-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |