DIODE GEN PURP 50V 1A SUB SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MBRF20100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 20A ITO220AC |
|
AR4PKHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
|
SS13LHRFGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |
|
U8DT-E3/4WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
S1B-E3/51TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
S8MCHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 8A DO214AB |
|
RD0306T-HSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 3A TP |
|
SF1001GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 10A TO220AB |
|
SFF2001GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 20A ITO220AB |
|
CDBMT150-HFComchip Technology |
DIODE SCHOTTKY 50V 1A SOD123H |
|
HER158-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 1.5A DO15 |
|
SD101BWS-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 50V 15MA SOD323 |
|
UGE5JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 5A TO220AC |