DIODE GEN PURP 50V 800MA SUB SMA
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 800 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 150 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UH2C-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
SF42G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO201AD |
|
D3041N58TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 5.8KV 4090A |
|
MBR5H150VP-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 150V 5A DO27 |
|
UH2C-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2A SMA |
|
AU3PDHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
|
SFF506G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A ITO220AB |
|
RJU4351SDPE-00#J3Renesas Electronics America |
DIODE GEN PURP 430V 10A LDPAK |
|
MA2J1150GLPanasonic |
DIODE GEN PURP 200V 200MA SMINI2 |
|
ZLLS1000TA-79Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 1.16A SOT23-3 |
|
SFAF507G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 5A ITO220AC |
|
B130LAW-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A SOD123 |
|
MGR1204-BPMicro Commercial Components (MCC) |
DIODE GPP TO-220AC |