DIODE AVALANCHE 400V 1.7A TO277A
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 1.7A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.9 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | 72pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-SD200N16PCVishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 200A DO205AC |
|
P600D-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A P600 |
|
UG2D R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
BYV28-200-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3.5A SOD64 |
|
SK215ATRSMC Diode Solutions |
DIODE SCHOTTKY 150V 2A SMA |
|
CSFC301-GComchip Technology |
DIODE GEN PURP 50V 3A DO214AB |
|
VSKY20401608-G4-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A CLP1608-2L |
|
BYG10M-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A |
|
AU2PJHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
|
ES3CB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 150V 3A SMB |
|
ACDBA3100-HFComchip Technology |
DIODE SCHOTTKY 100V 3A DO214AC |
|
CLL914 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOD80 |
|
CDLL6675Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 200MA DO213AA |