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BYG10M-E3/TR3

BYG10M-E3/TR3

DIODE AVALANCHE 1KV 1.5A

BYG10M-E3/TR3

BYG10M-E3/TR3

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Part No :

BYG10M-E3/TR3

Manufacturer
Vishay General Semiconductor – Diodes Division
Description
DIODE AVALANCHE 1KV 1.5A
Catalog
Diodes - Rectifiers - Single
Availability
11900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BYG10M-E3/TR3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Avalanche
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1.5A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 1.5 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 µs
Current - Reverse Leakage @ Vr:1 µA @ 1000 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:DO-214AC (SMA)
Operating Temperature - Junction:-55°C ~ 150°C
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