DIODE SCHOTTKY 1.2KV 10A TO220AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Not For New Designs |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
Capacitance @ Vr, F: | 650pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS32L,135Nexperia |
DIODE GEN PURP 75V 200MA LLDS |
|
BAV99/6235Rochester Electronics |
RECTIFIER DIODE |
|
V10P45S-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 4.4A TO277A |
|
CTLSH01-30 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 30V 100MA 2DFN |
|
RB058LAM-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 3A PMDTM |
|
VS-60EPF10-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
|
SA2M-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 2A DO214AC |
|
UF4005HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
MSC010SDA070BRoving Networks / Microchip Technology |
DIODE SCHOTTKY 700V TO-247 |
|
SD41GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 30A DO4 |
|
V35PWM15HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 35A SLIMDPAK |
|
VS-HFA16TB120S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
|
VS-12TQ040STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 15A D2PAK |